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zero gate bias

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  • Gate turn-off thyristor — For other uses of the word, see GTO (disambiguation). GTO thyristor symbol A gate turn off thyristor (GTO) is a special type of thyristor, a high power semiconductor device. GTOs, as opposed to normal thyristors, are fully controllable switches… …   Wikipedia

  • Insulated Gate Bipolar Transistor — Transistor bipolaire à grille isolée Symbole usuel de l’IGBT Le transistor bipolaire à grille isolée (IGBT, de l’anglais Insulated Gate Bipolar Transistor) est un dispositif semi conducteur de la famille des transistors qui est utilisé comme… …   Wikipédia en Français

  • Insulated gate bipolar transistor — Transistor bipolaire à grille isolée Symbole usuel de l’IGBT Le transistor bipolaire à grille isolée (IGBT, de l’anglais Insulated Gate Bipolar Transistor) est un dispositif semi conducteur de la famille des transistors qui est utilisé comme… …   Wikipédia en Français

  • semiconductor device — ▪ electronics Introduction       electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… …   Universalium

  • Organic field-effect transistor — OFET based flexible display An organic field effect transistor (OFET) is a field effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, by solution casting of… …   Wikipedia

  • Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… …   Wikipedia

  • Drain Induced Barrier Lowering — As channel length decreases, the barrier φB to be surmounted by an electron from the source on its way to the drain reduces Drain induced barrier lowering or DIBL is a secondary effect in MOSFETs referring originally to a reduction of threshold… …   Wikipedia

  • Nanofluidic circuitry — is a nanotechnology aiming for control of fluids in nanometer scale. Due to the effect of an electrical double layer within the fluid channel, the behavior of nanofluid is observed to be significantly different compared with its microfluidic… …   Wikipedia

  • Threshold voltage — The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The creation of this layer is described next …   Wikipedia

  • Depletion and enhancement modes — In field effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an ON state or an OFF state at zero gate–source voltage. Enhancement mode MOSFETs are the common …   Wikipedia

  • Graphene — is a one atom thick planar sheet of sp2 bonded carbon atoms that are densely packed in a honeycomb crystal lattice. It can be viewed as an atomic scale chicken wire made of carbon atoms and their bonds. The name comes from GRAPHITE + ENE;… …   Wikipedia

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